GeSi:H films are prepared by hot-wire chemical vapor deposition (CVD) with high hydrogen dilution, DH=98%. Effects of hot wire temperature (Tw) on deposition rate, structural properties and bandgap of GeSi:H films are studied with surface profilemeter, Raman spectroscopy, Fourier transformed infrared spectroscopy, and UV-VIS-NIR spectrophotometer. It is found that the deposition rate (Rd) goes up...
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