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InAs-AlSb high-electron mobility transistors stressed with hot carriers may exhibit shifts in the peak transconductance toward more negative gate-voltages. The devices are most degradation prone in operating conditions with high longitudinal (in the direction of IDS) electric fields in the channel. Room-temperature annealing, gate current, and channel-mobility measurements suggest the presence of...
We report the hot carrier reliability (HCR) of 45-nm SOI CMOS technology. Body contacted devices are shown to be more reliable than floating-body devices. Two different body-contacting schemes are investigated (T-body and notched T- body). The effects of total dose irradiation on reliability are investigated. Body contacted devices are shown to be more tolerant to radiation than floating-body devices...
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