Search results for: Han-Yin Liu

Items from 1 to 20 out of 34 results

article

Al₂O₃-Dielectric In_0.18Al_0.82N/AlN/GaN/Si Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors With Backside Substrate Metal-Trench Structure

Ching-Sung Lee, Wei-Chou Hsu, Han-Yin Liu, Yu-Chang Chen

IEEE Journal of the Electron Devices Society > 2018 > 6 > 1 > 68 - 73

This paper investigates novel Al₂O₃-dielectric In_0.18Al_0.82N/AlN/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) with backside metal-trench structure grown by using a non-vacuum ultrasonic spray pyrolysis deposition technique. 3-

$\mu \text{m}$

deep metal trenches coated with 150-nm thick Ni were formed on the backside of the Si substrate to improve the heat dissipation...

article

Improved Light Extraction Efficiency of GaN-Based Ultraviolet Light-Emitting Diodes by Self-Assembled MgO Nanorod Arrays

Han-Yin Liu, Yun-Chung Yang, Guan-Jyun Liu, Ruei-Chin Huang

IEEE Transactions on Electron Devices > 2017 > 64 > 12 > 5006 - 5011

This paper presents using ultrasonic spray pyrolysis deposition method to grow MgO nanorod arrays on the top surface and the sidewall of the GaN-based ultraviolet light-emitting diodes. It is found that when the thickness of the MgO film is over 60 nm, the self-assembled MgO nanorod arrays are obtained. Transmission electron microscopy, scanning electron microscopy, X-ray diffraction, X-ray photoelectron...

article

In Situ Growth of Al₂O₃ as a Passivation and Antireflection Layer on TiO₂-Based MSM Photodetectors

Han-Yin Liu, Guan-Jyun Liu, Ruei-Chin Huang, Wen-Ching Sun, more

IEEE Sensors Journal > 2017 > 17 > 16 > 5087 - 5092

The in situ growth of Al₂O₃ on TiO₂ by ultrasonic spray pyrolysis deposition is presented in this paper. Here, Al₂O₃ is used as the passivation and the antireflection layer. TiO₂-based photodetectors (PDs) with Al₂O₃, SiO₂, and no passivation layers were studied. It was found that the PD without the passivation layer has the highest dark current and photocurrent due to high internal photoconductive...

article

Improved Light Output Power of InGaN/GaN LED by Using Ultrasonic Spray Pyrolysis Deposited MgO

Han-Yin Liu, Ching-Sung Lee, Yun-Chung Yang

IEEE Transactions on Electron Devices > 2017 > 64 > 8 > 3246 - 3251

This paper presents an MgO thin films deposited by an ultrasonic spray pyrolysis deposition method to serve as passivation and antireflection layers of the InGaN/GaN light-emitting diodes (LEDs). The electrical, electroluminescence (EL), and efficiency characteristics of the LEDs with 60-, 70-, and 80-nm MgO films are investigated. It is found that the LEDs with the MgO films have lower reverse currents...

article

Comparative studies of normally-off Al0.26Ga0.74N/AlN/GaN/Si high electron mobility transistors with different gate structures

Ching-Sung Lee, Wei-Chou Hsu, Han-Yin Liu, Si-Fu Chen, more

Materials Science in Semiconductor Processing > 2017 > 66 > C > 39-43

Systematic designs to achieve normally-off operation and improved device performance for Al_0.26Ga_0.74N/AlN/GaN high electron mobility transistors (HEMTs) grown on a Si substrate are investigated in this work. The step-by-step approach includes: (1) devising a thin AlGaN/AlN composite barrier, (2) introducing fluoride ions within the active region by using CF₄ plasma treatment, (3) growing the Al₂O...

chapter

Gate structure engineering for enhancement-mode AlGaN/GaN MOSHEMT

Han-Yin Liu, Ching-Sung Lee, Chih-Wei Lin, Meng-Hsueh Chiang, more

2017 75th Annual Device Research Conference (DRC) > 1 - 2

2017 75th Device Research Conference (DRC)

Enhancement-mode AlGaN/GaN MOSHEMTs have been widely used in power electronic applications thanks to its superior electrical characteristics [1, 2]. Several methods have been proposed to fabricate E-mode AlGaN/GaN HEMTs like gate recess [3], F⁻ doping at the AlGaN barrier layer [4], and p-type GaN cap layer [5]. Nevertheless, the high threshold voltage and high output current is hard to obtain simultaneously...

article

Amorphous TiO₂-Based Thin-Film Phototransistor

Han-Yin Liu, Ruei-Chin Huang, Yi-Ying Li, Ching-Sung Lee, more

IEEE Electron Device Letters > 2017 > 38 > 6 > 756 - 759

This letter presents amorphous TiO₂-based thin-film phototransistors whose structures are designed for front-side and back-side illumination. The channel and gate dielectric layers are deposited by ultrasonic spray pyrolysis deposition, which is a non-vacuum, cost-effective, thin-film deposition technique similar to chemical vapor deposition. The material structure, chemical composition, and optical...

article

Ultrasonic Assisted Mist Chemical Vapor Deposition Deposited MgO for AlGaNGaN Metal-Insulator-Semiconductor Ultraviolet Photodetector

Han-Yin Liu, Ching-Sung Lee, Guan-Jyun Liu, Ruei-Chin Huang

IEEE Sensors Letters > 2017 > 1 > 2 > 1 - 4

This work uses an ultrasonic assisted mist chemical vapor deposition (UAM-CVD) technique to deposit the MgO film of 10nm as the insulator layer of the AlGaNGaN metal-insulator-semiconductor (MIS) ultraviolet photodetector. The illumination area was designed to be 0.47 mm². The thickness of the MgO film is confirmed by transmission electron microscopy (TEM). The optical characteristics of the MgO film...

article

A Comparative Study of Metal–Semiconductor–Metal Ultraviolet Photodetectors Based on Ultrasonic Spray Pyrolysis Deposited Anatase and Rutile TiO₂

Han-Yin Liu, Guan-Jyun Liu

IEEE Transactions on Electron Devices > 2017 > 64 > 3 > 1108 - 1113

Anatase and rutile TiO₂-based metal–semiconductor–metal (MSM) ultraviolet photodetectors (PDs) are fabricated and investigated. The TiO₂ thin films are grown by the ultrasonic spray pyrolysis deposition and the TiO₂ films are annealed at 400 °C and 800 °C to form the anatase and the rutile phases. The material characteristics were measured by X-ray diffraction, Raman spectrum, X-ray photoelectron...

article

Integration of Gate Recessing and In Situ Cl⁻ Doped Al₂O₃ for Enhancement-Mode AlGaN/GaN MOSHEMTs Fabrication

Han-Yin Liu, Chih-Wei Lin, Wei-Chou Hsu, Ching-Sung Lee, more

IEEE Electron Device Letters > 2017 > 38 > 1 > 91 - 94

This letter demonstrates an integration process of in situ Cl⁻ doped Al₂O₃ and gate recess technique to fabricate the enhancement mode AlGaN/GaN MOSHEMTs. The Cl⁻ doped Al₂O₃ thin film is deposited by the ultrasonic spray pyrolysis deposition and characterized by transmission electron microscopy and X-ray photoelectron spectroscopy. The relative permittivity of Cl⁻ doped Al₂O₃ is higher than the pure...

article

A study of ultrasonic spray pyrolysis deposited rutile-TiO2-based metal-semiconductor-metal ultraviolet photodetector

Han-Yin Liu, Wei-Hsun Lin, Wen-Ching Sun, Sung-Yen Wei, more

Materials Science in Semiconductor Processing > 2017 > 57 > C > 90-94

This work uses ultrasonic spray pyrolysis deposition to grow the TiO₂ film on a Si substrate. The TiO₂ film was annealed at 800°C for 2h to form rutile phase. X-ray diffraction, Raman spectrum, X-ray photoelectron spectroscopy were used to characterized rutile phase TiO₂. The optical characteristics like refractive index, extinction coefficient and absorption coefficient were measured. The rutile...

article

Investigation of Post Oxidation Annealing Effect on H₂O₂-Grown-Al₂O₃/AlGaN/GaN MOSHEMTs

Han-Yin Liu, Wen-Chia Ou, Wei-Chou Hsu

IEEE Journal of the Electron Devices Society > 2016 > 4 > 5 > 358 - 364

This paper investigates the Al₂O₃/AlGaN/GaN metal–oxide–semiconductor high electron mobility transistor (MOSHEMT) performance with post oxidation annealing (POA) process. First, the optimum annealing condition was found to be 400 °C for 20 min. The transmission electron microscopy, atomic force microscopy, and X-ray photoelectron spectroscopy were used for material analysis. The hysteresis capacitance–voltage...

article

Investigation of TiO₂-Based MISIM Ultraviolet Photodetectors With Different Insulator Layer Thickness by Ultrasonic Spray Pyrolysis Deposition

Han-Yin Liu, Wen-Ching Sun, Sung-Yen Wei, Sheng-Min Yu

IEEE Transactions on Electron Devices > 2016 > 63 > 6 > 2424 - 2430

This work uses ultrasonic spray pyrolysis deposition to grow titanium dioxide and aluminum oxide (Al₂O₃) films, respectively, as an active layer and an insulator layer of the metal–insulator–semiconductor–insulator–metal (MISIM) photodetector (PD). 10-, 20-, and 30-nm-thick Al₂O₃ films were deposited and the

$I$

–

$V$

characteristics in the dark and under illumination were measured and investigated...

article

Investigation of AlGaN/GaN Ion-Sensitive Heterostructure Field-Effect Transistors-Based pH Sensors With Al₂O₃ Surface Passivation and Sensing Membrane

Han-Yin Liu, Wei-Chou Hsu, Wei-Fan Chen, Chih-Wei Lin, more

IEEE Sensors Journal > 2016 > 16 > 10 > 3514 - 3522

This paper demonstrates an AlGaN/GaN ion-sensitive heterostructure field-effect transistors (ISHFETs)-based pH sensors with an aluminum oxide (Al₂O₃) to serve as a passivation layer and a sensing membrane at the same time. Al₂O₃ was deposited by the ultrasonic spray pyrolysis deposition (USPD) method. It was found that the ISHFET with Al₂O₃ showed a higher pH sensitivity of 55.6 mV/pH, a faster response...

article

Characterization of TiO₂-Based MISIM Ultraviolet Photodetectors by Ultrasonic Spray Pyrolysis

Han-Yin Liu, Wen-Ching Sun, Sung-Yen Wei, Sheng-Min Yu

IEEE Photonics Technology Letters > 2016 > 28 > 6 > 637 - 640

In this letter, non-vacuum ultrasonic spray pyrolysis deposition was used to grow Al₂O₃/TiO₂ thin film as the metal–insulator–semiconductor–insulator–metal ultraviolet photodetector (MISIM UV PD). The anatase TiO₂ with 400 °C annealing was used as the active layer of the UV PD. X-ray diffraction and Raman spectra were used to characterize the crystal phase of the TiO₂. The Al₂O₃/TiO₂ MISIM UV PD has...

article

TiO₂-Based Metal–Semiconductor–Metal Ultraviolet Photodetectors Deposited by Ultrasonic Spray Pyrolysis Technique

Han-Yin Liu, Shen-Hui Hong, Wen-Ching Sun, Sung-Yen Wei, more

IEEE Transactions on Electron Devices > 2016 > 63 > 1 > 79 - 85

This paper uses nonvacuum ultrasonic spray pyrolysis deposition method to grow TiO₂ for ultraviolet (UV) detection. The analyses of the materials like X-ray photoelectron spectroscopy, X-ray diffraction, and photoluminescence were investigated. The 600 °C annealing temperature is the optimum condition to obtain the anatase TiO₂. The metal–semiconductor–metal (MSM) photodetectors (PDs) with 3-, 5-,...

article

Suppression of Dark Current on AlGaN/GaN Metal–Semiconductor–Metal Photodetectors

Han-Yin Liu, Yi-Hsuan Wang, Wei-Chou Hsu

IEEE Sensors Journal > 2015 > 15 > 9 > 5202 - 5207

This paper proposes the H₂O₂ oxidation technique to grow Al₂O₃ as the surface passivation layer of the metal–semiconductor–metal ultraviolet (UV) photodetector (PD). The dark current of the H₂O₂-grown-Al₂O₃-passivated PD was reduced from 104 to 4.43 nA. The surface leakage of the PD was reduced from 65.7 nA/

$1.67~\mu \text{A}$

to 0.46 nA/0.5 nA in the dark/under illumination. It was found that ...

article

Enhanced Performances of AlGaN/GaN Ion-Sensitive Field-Effect Transistors Using H₂O₂-Grown Al₂O₃ for Sensing Membrane and Surface Passivation Applications

Han-Yin Liu, Wei-Chou Hsu, Ching-Sung Lee, Bo-Yi Chou, more

IEEE Sensors Journal > 2015 > 15 > 6 > 3359 - 3366

This paper uses H₂O₂ oxidation technique to grow Al₂O₃ on AlGaN/GaN heterostructure. The H₂O₂-grown-Al₂O₃ is served as a sensing membrane and a surface passivation layer. The contact angle of the ion-sensitive field-effect transistor (ISFET) with the H₂O₂-grown-Al₂O₃ is improved from 66.5° to 40.6° and this phenomenon indicates that the hydrophile characteristic is improved after the H₂O₂ treatment...

chapter

Temperature-dependent electrical performance of AlGaN/GaN MOS-HEMT with ultrasonic spray pyrolysis deposited Al₂O₃

Han-Yin Liu, Wei-Chou Hsu, Bo-Yi Chou, Ching-Sung Lee, more

2015 IEEE 11th International Conference on Power Electronics and Drive Systems > 575 - 577

2015 IEEE 11th International Conference on Power Electronics and Drive Systems

This work investigates an AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) with ultrasonic spray pyrolysis (USP) deposited Al₂O₃. The temperature-dependent electrical characteristics like I_GD-V_GD, I_DS-V_DS, and I_DS-V_GS are measured from 300 K to 480 K. The MOS-HEMT shows lower I_GD and higher I_DS and higher g_{m, max}. Furthermore, the MOS-HEMT has better thermal stability...

article

Investigations of TiO₂–AlGaN/GaN/Si-Passivated HFETs and MOS-HFETs Using Ultrasonic Spray Pyrolysis Deposition

Ching-Sung Lee, Wei-Chou Hsu, Bo-Yi Chou, Han-Yin Liu, more

IEEE Transactions on Electron Devices > 2015 > 62 > 5 > 1460 - 1466

Comparative studies for TiO₂-passivated Al_0.25Ga_0.75N/GaN heterostructure FETs (HFETs) and TiO₂-dielectric MOS-HFETs using nonvacuum ultrasonic spray pyrolysis deposition technique are made. Optimum device performances are obtained by tuning the layer thickness of TiO₂ to 20 nm. High relative permittivity (

$k$

) of 53.6 and thin effective oxide thickness of 1.45 nm are also obtained. Pulse-IV, Hooge...

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Search results for: Han-Yin Liu

Al₂O₃-Dielectric In_0.18Al_0.82N/AlN/GaN/Si Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors With Backside Substrate Metal-Trench Structure

Improved Light Extraction Efficiency of GaN-Based Ultraviolet Light-Emitting Diodes by Self-Assembled MgO Nanorod Arrays

In Situ Growth of Al₂O₃ as a Passivation and Antireflection Layer on TiO₂-Based MSM Photodetectors

Improved Light Output Power of InGaN/GaN LED by Using Ultrasonic Spray Pyrolysis Deposited MgO

Comparative studies of normally-off Al0.26Ga0.74N/AlN/GaN/Si high electron mobility transistors with different gate structures

Gate structure engineering for enhancement-mode AlGaN/GaN MOSHEMT

Amorphous TiO₂-Based Thin-Film Phototransistor

Ultrasonic Assisted Mist Chemical Vapor Deposition Deposited MgO for AlGaNGaN Metal-Insulator-Semiconductor Ultraviolet Photodetector

A Comparative Study of Metal–Semiconductor–Metal Ultraviolet Photodetectors Based on Ultrasonic Spray Pyrolysis Deposited Anatase and Rutile TiO₂

Integration of Gate Recessing and In Situ Cl⁻ Doped Al₂O₃ for Enhancement-Mode AlGaN/GaN MOSHEMTs Fabrication

A study of ultrasonic spray pyrolysis deposited rutile-TiO2-based metal-semiconductor-metal ultraviolet photodetector

Investigation of Post Oxidation Annealing Effect on H₂O₂-Grown-Al₂O₃/AlGaN/GaN MOSHEMTs

Investigation of TiO₂-Based MISIM Ultraviolet Photodetectors With Different Insulator Layer Thickness by Ultrasonic Spray Pyrolysis Deposition

Investigation of AlGaN/GaN Ion-Sensitive Heterostructure Field-Effect Transistors-Based pH Sensors With Al₂O₃ Surface Passivation and Sensing Membrane

Characterization of TiO₂-Based MISIM Ultraviolet Photodetectors by Ultrasonic Spray Pyrolysis

TiO₂-Based Metal–Semiconductor–Metal Ultraviolet Photodetectors Deposited by Ultrasonic Spray Pyrolysis Technique

Suppression of Dark Current on AlGaN/GaN Metal–Semiconductor–Metal Photodetectors

Enhanced Performances of AlGaN/GaN Ion-Sensitive Field-Effect Transistors Using H₂O₂-Grown Al₂O₃ for Sensing Membrane and Surface Passivation Applications

Temperature-dependent electrical performance of AlGaN/GaN MOS-HEMT with ultrasonic spray pyrolysis deposited Al₂O₃

Investigations of TiO₂–AlGaN/GaN/Si-Passivated HFETs and MOS-HFETs Using Ultrasonic Spray Pyrolysis Deposition

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