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To enhance the performances of the depletion-mode zinc-oxide (ZnO)-based MOSFETs, the multiple-channel and multiple-gate fin structures were deposited using the magnetron sputter system and patterned using the laser interference photolithography technique. The multiple-channel fin structure possessed the additional sidewall depletion width to enhance the gate controllability. The multiple-gate structure...
SiGe based metal-oxide-semiconductor field-effect transistors (MOSFETs) were fabricated, in which the SiGe channel layer was deposited by using laser-assisted plasma-enhanced chemical vapor deposition (LAPECVD) system. The characteristics were compared with the device without laser assistance.
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