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In this work, for the first time we propose a Germanium on FinBOX based structure for an Electron-Hole Bilayer Tunnel FET (FB-EHBTFET) including Quantum Effects. The structure provides improved OFF state leakage suppression of more than five orders without the need of gated underlap that is required in the conventional EHBTFET and Fin EHBTFET. This reduces the device size by ∼25% compared to the Fin...
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