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In this work we report on the three dominant trapping mechanisms affecting the dynamic performance of a double‐heterostructure GaN‐based MIS‐HEMT grown on silicon substrate. In the OFF‐state, with high drain voltage and pinched‐off 2DEG, the dominant mechanism is the charge‐trapping in the gate‐drain access region caused by the transversal drain‐to‐substrate potential. This effect causes the dynamic...
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