We report here the laser patterned Ga‐polar p‐GaN surface to improve the light extraction efficiency of GaN based blue light emitting diodes (LEDs) by using a pulsed UV laser in combination with a mirror scanner. The patterns created on p‐GaN are confirmed to be suitable for light extraction and a 34.9% enhancement of the electroluminescent (EL) emission intensity has been obtained. Detailed discussions...
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