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The adoption of silicon carbide (SiC) MOSFETs in variable speed drives (VSDs) makes it possible to increase the inverter switching frequency up to several hundred kilohertz without incurring excessive inverter loss. As a result, the harmonic currents and related losses in the machine can be significantly reduced, and the dynamic performance of motor will also be improved. However, the high switching...
The adoption of silicon carbide (SiC) MOSFETs in variable speed motor drives makes it possible to increase the inverter switching frequency up to several hundred kilohertz without incurring excessive inverter loss. As a result, the harmonic currents and related losses in the machine can be significantly reduced, and the dynamic performance of motor will also be improved. However, the increased switching...
This paper describes a comprehensive analysis of a three-phase two-level silicon carbide (SiC) MOSFET V2G inverter including the LCL filter design. The efficiency is compared between the SiC MOSFET and Si IGBT. Using a SiC device enables the inverter to operate at high switching frequency and this leads to improved efficiency up to 99.05% at 10 kHz and 97.71% at 100 kHz switching frequency. The output...
GaN power switching devices are promising candidates for high switching frequency and high efficiency operations due to their lower on-resistance and faster switching capabilities compared to conventional silicon power devices. As the switching frequency increases up to the MHz-level, soft switching plays an important role to further minimize the switching losses and improve the efficiency. In this...
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