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Shielded-gate trench or “Shield RESURF (REduced SURface Field)” MOSFETs have been well known for its lower RDS(ON) ×Area, and lower Rds(on)×Qgd figure of merits (FoMs), and used widely in the low to medium voltage applications (25 V to 200 V). However, this improvement is achieved at the expense of higher output capacitance or output charge (Coss or Qoss), which has become an increasingly important...
A new low voltage power MOSFET concept termed the Junction Enhanced Trench Field Effect Transistor (JETFET) is proposed which combines the advantages of high cell density of trench MOSFET, low gate charge of LDMOS, and low drift region resistance of superjunction MOSFET. The JETFET concept was investigated using 2D process and device TCAD simulation. The feasibility of further improving the Figure...
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