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A new low voltage power MOSFET concept termed the Junction Enhanced Trench Field Effect Transistor (JETFET) is proposed which combines the advantages of high cell density of trench MOSFET, low gate charge of LDMOS, and low drift region resistance of superjunction MOSFET. The JETFET concept was investigated using 2D process and device TCAD simulation. The feasibility of further improving the Figure...
Realistic estimation of power MOSFET switching losses is critical for predicting the maximum junction temperature and efficiency of power electronics circuits. The purpose of this paper is to investigate the internal physics of MOSFET switching processes using a physically based semiconductor device modeling approach, and subsequently examine the commonly used power loss calculation method based on...
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