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A new low voltage power MOSFET concept termed the Junction Enhanced Trench Field Effect Transistor (JETFET) is proposed which combines the advantages of high cell density of trench MOSFET, low gate charge of LDMOS, and low drift region resistance of superjunction MOSFET. The JETFET concept was investigated using 2D process and device TCAD simulation. The feasibility of further improving the Figure...
In this paper, a high-current dc–dc power supply in package is reported with an emphasis on the design aspects of the low- and high-side power MOSFETs embedded in the power module. A new NexFET structure with its source electrode on the bottom side of the die (source down) is designed to enable an innovative stacked-die PSiP technology with significantly reduced parasitic inductance and package footprint...
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