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Superjunction has arguably been the most creative and important concept in the power device field since the introduction of the insulated gate bipolar transistor (IGBT) in the 1980s. It is the only concept known today that has challenged and ultimately proved wrong the well-known theoretical study on the limit of silicon in high-voltage devices. This paper deals with the history, device and process...
An insulated gate bipolar transistor (IGBT) physical model with field stop cell structure is presented in this paper. The extraction method for all parameters is also given here. The parameters are extracted for Fuji Electric 1.7kV/300A IGBT (2MBI300VN-170-50). The accuracy of the model is verified by experiments.
In a hybrid IGBT module with SiC diodes as free-wheeling diodes, high frequency oscillation occurs during turn-on, which will cause higher EMI noise due to the larger capacitance of SiC diode. To evaluate the influence of gate drive parameters on turn-on oscillation, different gate voltages and gate charge currents are used. It is found that by changing gate drive parameters alone cannot reduce the...
Although SiC MOSFET has significant improvements on switching performance compared with traditional Si power devices, the dynamic loss of the converter rises with the increase of the switching frequency of the converter. To further improve the efficiency of SiC inverter and power density, Zero-Voltage-Switching (ZVS) is investigated. A SiC full-bridge inverter with ZVS-switching is presented. The...
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