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The DC properties of 110-nm gate-length InAs/AlSb-based HEMTs at cryogenic (30 K) and room temperature (300 K) have been investigated. Compared to 300K, devices at 30 K exhibited lower on-resistance (RON) and output conductance (gDS), a higher transconductance (gm) and a more distinct knee in the IDS(VDS) characteristics. The improvement in the DC performance at cryogenic temperature should mainly...
This work reports on the Te delta-doping of high electron mobility AlInSb/GaInSb heterostructures grown on InP(001). We show a significant increase of the electron sheet density when the delta-doping plane is incorporated in a thin AlSb layer introduced in the barrier. For the first time, AlInSb/GaInSb heterostructures with an electron mobility of 18,000 cm2/V.s and sheet density of 2.2times1012 cm...
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