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A cryogenic wideband 4–8 GHz hybrid low-noise amplifier, based on a 110 nm gate length InAs/AlSb HEMT process is presented. At room temperature the three-stage amplifier exhibited a transducer gain of 29 dB and a noise temperature of 150 K with 17.6 mW power consumption. When cooled to 13 K, the amplifier showed a minimum noise temperature of 19 K at a power consumption of 6 mW (66% reduction compared...
For more than 30 years, III-V materials and associated transistors or integrated circuits aroused of numerous studies to achieve today an industrial reality with the availability of a panel of high performance technologies. For the development of these III-V technologies, there was no established roadmap; the line of sight was essentially the increase of the operating frequency limit (more than 300GHz)...
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