This paper presents the current status of oxide semiconductor technology for applications ranging from interactive displays to imaging systems with a strong focus on device-circuit interaction to compensate for material weaknesses and issues related to non-uniformity, instability, and persistent photoconductivity.
A new voltage-programmed pixel circuit using hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) for active-matrix organic light-emitting diodes (AMOLEDs) is presented. In addition to compensating for the shift in threshold voltage of TFTs, the circuit is capable of compensating for OLED luminance degradation by employing the shift in OLED voltage as a feedback of OLED degradation
Hydrogenated amorphous silicon (a-Si:H) active matrix organic light-emitting diode (AMOLED) displays are attractive given the potentially low manufacturing cost and ultimately low-temperature fabrication enabling using flexible substrates. Although the conventional two thin-film transistor (2-TFT) AMOLED voltage-programmed pixel circuit (VPPC) can provide high resolution and high yield, the 2-TFT...
Financed by the National Centre for Research and Development under grant No. SP/I/1/77065/10 by the strategic scientific research and experimental development program:
SYNAT - “Interdisciplinary System for Interactive Scientific and Scientific-Technical Information”.