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This paper gives a comprehensive comparison of two promising silicon carbide (SiC) switching devices, i.e. normally-off SiC MOSFET and a normally-on SiC JFET, as alternatives to a conventional state of the art Si IGBT. The comparison uses datasheet information to determine conduction losses, switching transition measurements for switching loss calculations and electrical power measurements in a boost...
We report a study of power supply reduction to near-threshold for an 8-transistor CNTFET SRAM cell. Voltage at near-threshold has an impact on delays, energy, energy-delay product, leakage current, and static noise margin. In addition, we have incorporated a removed metallic CNT approach to deal with non-semiconductor CNTs. In this study we investigate how to enhance SRAM performance by means of two...
This paper presents the design of a modified StrongArm regenerative comparator in 0.13-μm CMOS technology, operating at a supply voltage of 200-mV. The comparator uses a pair of cross-coupled P-type transistors to replace the conventional cross-coupled inverters, improving the comparison time and voltage headroom. A robust S-R latch is proposed to solve the race condition which occurs when the S-R...
This paper deals with the switching behavior of a SiC MOSFET in a TO-247 package. Based on simulations, critical parasitic inductances in the circuit layout are analyzed and their effect on the switching losses highlighted. Especially the common source inductance, a critical parameter in a TO-247 package, has a major influence on the switching energy. Crucial design guidelines for an improved double...
Implementations of SRAM cells in FinFET and carbon nanotube FET (CNTFET) technologies are presented in this paper. The International Technology Roadmap for Semiconductors has identified these technologies as likely candidates to replace bulk CMOS. Leakage current is one of the major contributors in the power consumption in SRAM arrays; FinFETs have been shown to greatly reduce leakage current. The...
In this study we present a metallic carbon nanotube (CNT) tolerant CNTFET memory. The proposed scheme includes a number of uncorrelated (independent) CNTs in series to form CNTFETs provides tolerance to metallic CNTs. To increase driving capabilities parallel (correlated) transistors are used. In addition spare columns are used to increase the memory array yield. An extremely high probability of having...
This paper presents a novel bidirectional DC-DC converter for the supercapacitor application. In the proposed converter, push-pull forward with half bridge (PPFHB) voltage doubler structure is used to reduce the number of the power switches and get higher voltage gain. Based on phase-shift modulation scheme, all the switches can realize zero-voltage switching (ZVS) turn-on and bidirectional power...
An interleave buck converter with coupled inductor is proposed in this paper. Continuous input current, low input and output ripple current, good transient response are realized with the proposed converter. Detailed analyses and simulations are presented. Experimental results meet them very well.
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