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In this study, we present a Carbon Nanotube (CNT) FET based 8T SRAM cell and its performance in near threshold voltage region. Metallic CNTs (M-CNTs) grow alongside semiconductor CNTs in current synthesis process, but they can be removed using novel techniques. This in turn creates open circuit and degrades the performance and functionality of SRAM cells. In this paper we apply a removed metallic...
This study focuses on the design of logic gates built with Carbon Nanotube Field Effect Transistors (CNTFETs). Due to current fabrication issues, a certain percentage of the carbon nanotubes (CNTs) are not functioning as semiconductors but as simple conductors (called metallic CNTs). Therefore, it is necessary to arrange the transistors within a gate in a way that the character of the gate is maintained,...
A study of an eight-transistor (8-T) SRAM cell and its implementation in carbon nanotube FET (CNTFET) technology is presented. CNTFETs have shown great potential as post-silicon CMOS technology due to their superior transport properties, improved current density and excellent robustness to process, voltage and temperature variations. HSPICE simulations demonstrate great advantages for this cell design...
Implementations of SRAM cells in FinFET and carbon nanotube FET (CNTFET) technologies are presented in this paper. The International Technology Roadmap for Semiconductors has identified these technologies as likely candidates to replace bulk CMOS. Leakage current is one of the major contributors in the power consumption in SRAM arrays; FinFETs have been shown to greatly reduce leakage current. The...
In this study we present a metallic carbon nanotube (CNT) tolerant CNTFET memory. The proposed scheme includes a number of uncorrelated (independent) CNTs in series to form CNTFETs provides tolerance to metallic CNTs. To increase driving capabilities parallel (correlated) transistors are used. In addition spare columns are used to increase the memory array yield. An extremely high probability of having...
In this paper three carbon nanotube FET based static memory cells are compared on read and write delays, energy consumption, and performance under diameter variation corners. The carbon nanotube FET is currently considered to be the possible ldquobeyond CMOSrdquo device due to its1-D transport properties that include low carrier scattering and ballistic transport. The memory cells are classified by...
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