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Ferromagnet/oxide interfaces that ensure perpendicular magnetic anisotropy (PMA) features are critical for developing spintronic technologies such as perpendicular magnetic tunnel junctions, which are the most reliable building blocks for spin transfer torque switching or spin-orbit-torque switching. As such, metal/CoFeB/MgO frames containing various transition metals have been a central component...
Typical CoFeB/MgO frames ensuring interface perpendicular magnetic anisotropy (PMA) features are one of the most reliable building blocks to meet the demand of PMA-based memory devices. However, employing the CoFeB/MgO frame with a Ta buffer layer has been restricted by the rapid PMA degradation that occurs during annealing at temperatures greater than 300°C and the need of an ultrathin CoFeB layer...
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