The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
The effects of ultrathin EOT on the carrier mobility in bulk-Si, UTBOX-FDSOI and SiGe-QW pFET devices were compared. The mobility is found to decrease dramatically with the EOT (Tinv) as a result of stronger charge and surface roughness scattering at thinner SiOx interface layers irrespective of the device technology. UTBOX-FDSOI and bulk-Si nFETs have identical mobility values (190 cm2/Vs) at Tinv...
Atomistic modeling and optimized TCAD simulation strategy for Laser-only annealing device are shown. Multiple laser annealing scans are modeled by using atomistic KMC. KMC clarified that dopant diffusion is changed as a function of laser scan number. SSRM with 1 nm special resolution is used for the 2-dimensional carrier distribution measurement and dopant active level determination. It is shown that...
A thermo-mechanical stress model (TMS) is presented to explain the impact of sub-melt laser anneal (LA) on SiON dielectric and on the overall transistor performance. An Lgmin reduction of 15nm/5nm for nMOS/pMOS over our poly-Si/SiON reference, with 8% capacitance and 10% source and drain resistance (RSD) improvement, is demonstrated. Best device performance and NBTI immunity are reached by lowering...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.