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We report on a major advancement in full-field EUV lithography technology. A single patterning approach for contact level by EUVL (NA=0.25) was used for the fabrication of electrically functional 0.186 mum2 6T-SRAMs, with W-filled contacts. Alignment to other 193 nm immersion litho levels shows very good overlay values les20 nm. Other key features of the process are: 1) use of high-k/Metal Gate FinFETs...
This paper presents a study on the effectiveness of strained contact-etch-stop-layer (CESL) technologies in aggressively scaled dense structures. The focus is on nested transistors, which is a technologically very important structure that consists of a chain of gates on one active area. It will be shown that the two main channel stress components introduced by CESL, which are the vertical and parallel...
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