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This letter demonstrates an integration process of in situ Cl− doped Al2O3 and gate recess technique to fabricate the enhancement mode AlGaN/GaN MOSHEMTs. The Cl− doped Al2O3 thin film is deposited by the ultrasonic spray pyrolysis deposition and characterized by transmission electron microscopy and X-ray photoelectron spectroscopy. The relative permittivity of Cl− doped Al2O3 is higher than the pure...
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