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We reported fabrication and field emission properties of carbon nanotube (CNT) field emitters which indicated the point-type CNT film emitter and line-type CNT film emitter. The CNT film field emitters were made by cutting CNT film using a razor. The CNT film emitters showed good emission properties such as the low turn-on field, the high emission current in a triode configuration. Especially, the...
We fabricated the point-type CNT emitter for cold cathode x-ray source applications. The CNT point emitter was made by CNT film with a triangular tip shape, which was clamped using two stainless steel plates. Electrical properties of the point-type CNT emitter measured in triode structure showed the low turn-on and threshold electric fields, the high emission current and relatively high electron transmittance...
Field emission properties of boron nitride (BN) nanomaterials have been studied for years to apply it at harsh ambient condition. However, the field emitters fabricated using the BN nanomaterials have limitations to utilize it as field emission devices due to their poor emission performances. Here, we report much enhanced field emission properties of the BN nanomaterial with low turn-on electric field,...
We fabricated graphite nanoplatelet (GNP) field emitters using graphite adhesive and graphite rod. Comparing the field emission properties for different gap, turn-on electric field and threshold electric field were decreased almost in half, and maximum current density was increased about half as many again. The long-term emission stability also shows better results in large gap more than small gap...
A sheet electron beam source is demonstrated using a line-shape carbon nanotube (CNT) field emitter. The line-shape CNT field emitter shows large emission current under the small applied voltage. Moreover, the emitted electron is well-confined without any focusing lens.
We demonstrated high performance field emission of carbon nanotube (CNT) field emitters fabricated on a graphite rod. After the thermal annealing at 900 °C in vacuum ambient, the emitter showed a high emission current of 11.3 mA, corresponding to an emission current density of 5.8 A/cm2. The CNT emitter indicated a low turn-on field of 1.9 V/µm and stable emission stability at a current of 1 mA. In...
Boron nitride nanotubes (BNNTs) have been studied as a field emission material due to their unique and excellent properties such as high oxidation resistance and negative electron affinity. However, field emission properties of BNNT field emitters were rarely reported until now because it is difficult to synthesize high purity BNNTs and fabricate stable BNNT field emitters. Here, we report high field...
We demonstrated a novel point-typed carbon nanotube field emitters using a triangular-shaped carbon nanotube films. We also investigated the field emission properties of the field emitters according to the tip angles. The wider field emitters exhibited higher emission current, and the field emitters with a tip angle of 120° showed extremely high emission current density over 104 A/cm2 (> 10 mA)...
Boron nitride (BN) nanomaterials have negative electron affinity, which makes BN a promising cold electron emission material. BN nanotube (BNNT) field emitters show excellent oxidation endurance after high temperature thermal annealing at 600 °C in air ambient. There is no damage to the BNNTs after the thermal annealing at a temperature of 600 °C and also no degradation of field emission properties...
We demonstrated the fabrication of point-typed field emitters by using carbon nanotube films on graphite rods and investigated their field emission properties. The field emitter showed an increased emission current and an improved long-term emission stability after edge polishing process. The highest emission current of the field emitter was increased from 2.0 mA to 4.3 mA (1.1 A/cm2). The field emitter...
Boron nitride (BN) nanomaterials have excellent electrical, chemical and mechanical properties, such as high thermal conductivity, resistant to oxidation, chemical inertness, and negative electron affinity. These unique features make BN a promising cold electron emission material. In this work, we investigated on the field emission properties from BN nanotubes (BNNTs), among the various BN allotropes...
We demonstrated carbon nanotube point emitters fabricated by using free standing carbon nanotube films. The point emitters showed stable and large emission current under the small applied voltage. Moreover, the emitted electrons were focused well without any focusing lens
We report for the first time synthesis of high-density arrays of vertically well-aligned cobalt monosilicide (CoSi) nanowires (NWs) in a large area via a solid-state reaction. The vertical arrays of 1-μm-long Si NWs were first grown on a -type (1 0 0) Si substrate by the aqueous electroless etching (AEE) method, and a 40-nm-thick Co layer was conformally deposited using a thermal atomic layer deposition...
For application to electron field emission devices, a metal grid based on a silicon frame is introduced. Silicon frame is used to improve the thermal resistivity and electrical stability by electron beam. Silicon based micro-scale metal grid fabricated using MEMS technology.
We demonstrated carbon nanotube (CNT) field emitters made by a filtration-transfer method. They showed low turn-on and threshold electric fields, which is attributed to the advantages of this method, such as the high density of emission sites, good electrical contact, strong mechanical adhesion, and low contamination of CNTs tips. In addition, the field emitters showed very stable emission stability...
We fabricated the point emitter using a tip-treated carbon nanotube (CNT) fiber. The CNT point emitter showed the high emission current and good emission stability. It is considered that the excellent field emission properties are attributed to a large field enhancement factor caused by a large aspect ratio of the sharp tip of the point emitter and the tight binding of CNTs.
In this paper, we fabricated organic-free thin multi-walled CNT (thin-MWCNT) field emitters using a new filtration-transfer method. The method firstly forms the density-controlled thin-MWCNT film on a filter membrane by filtration and then transfers the film to a conductive adhesive tape. We evaluated and compared the genuine field emission properties of various CNT field emitters by using the filtration-transfer...
The authors demonstrated decoration of Ru nanoparticles on the surface of double-walled CNTs (DWCNTs) using a chemical process and studied their field emission properties. Ru is more stable than the low work function alkali metals when exposed to oxygen. Moreover, the melting point of Ru is much higher than that of RuO2.
In this study, we tried to cut thin multi-walled CNTs (thin-MWCNTs) using a tip sonication method and investigated the cutting effect of CNTs from their microstructure and also evaluated field emission properties.
In summary, the SWCNT and DWCNT point emitters were fabricated by attaching CNT bundles onto the AFM tip using a dielectrophoresis method. We could find that the SWCNT point emitter indicated the better field emission performance compared with the DWCNT point emitter. We expect that the probe type CNT based point emitter can be used in the various applications such as x-ray sources and microwave amplifier...
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