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Gate-coupled reflectometric spectrometry has recently emerged as a tool for studies of transport in nanostructures. Here we report reflectometric spectroscopy of a double-gate single electron device in which two coupled quantum dots are formed under the gates. The spectroscopy is performed by detection of charging processes in the system using a dual port reflectometer. The potential application of...
Recently developed dual port reflectometric spectroscopy (DPRS) not only enables detection of single electron charging events in nanoscaled MOS single-electron transistors (SETs) that are not detectable using conventional transport spectroscopy, but DPRS also provides the ability to spatially localize charging events and discriminate between charging events involving defects and those associated with...
Radio-frequency reflectometry (RFR) is a technique that was developed to characterize the properties of transmission lines by observing reflected waveforms. Today, it is widely used in a variety of applications, ranging from the detection of faulty wires in cables and objects buried in the ground to soil moisture detectors and the measurement of dielectric properties of blood. Recently, one important...
We demonstrate a novel dual channel reflectometry technique for identification of charging processes in nanoscale Si single-electron transistors (SETs). By analyzing signals reflected from the drain and the gate of the SET we are able to pinpoint the details of single electron charging in the SET island and in the charged defects nearby.
We present the co-integration of a ring-oscillator based CMOS circuit purposely designed to drive RF signals onto the gates of a single-electron device. It is fabricated on 300 mm wafers with the nanowire silicon-on-insulator technology and operated at cryogenic temperatures. Using the same technology for both the classical circuit and the quantum device is a unique opportunity which is implemented...
Si CMOS single-electron transistors (SET) fabricated using fully depleted SOI [1] enable an understanding of charging mechanisms in ultimately scaled CMOS devices down to a transport through a single dopant [2]. A schematic representation of such a device is shown in Fig 1.
We apply radio-frequency reflectometry (RFR) to nanowire Silicon-On-Insulator (SOI) single-electron transistors with a novel experimental configuration in which RFR is performed simultaneously at both the drain and gate of the device. We use this technique to investigate the effects of back-gating on the measured RFR characteristics of the SETs, and discuss possible experimental limitations of this...
Nanoelectronics will have to face major challenges in the next decades in order to proceed with increasing progress to the sub 10 nm nodes level and face the challenge to approach zero variability. The main requirements will be to reduce leakage currents and reduce access resistances at the same time in order to fully exploit 3D integration at the device, elementary function, chip and system. New...
A dual mode device has been realized with FDSOI MOSFET technology implementing both a single electron transistor (SET) and a field effect transistor (FET). The silicon substrate is used as a back gate to choose between these two functionalities. We show in this paper that the behavior of the device is determined by the position of the electron gas in the silicon mesa: the device is a SET if the electron...
Low temperature electron transport measurements of single electron transistors fabricated in advanced CMOS technology with polysilicon gates not only exhibit clear Coulomb blockade behavior but also show a large number of additional conductance fluctuations in the nonlinear regime. By comparison with simulations these features are quantitatively attributed to the effects of discretely charged islands...
Large scale production of single-electron transistors (SETs) is now possible with a standard fully-depleted SOI process. Although the operating temperature is limited to approximately 10 K for now, this opens new opportunities for implementing on-chip hybrid designs combining the benefits of Coulomb blockade with regular FET-based electronics. Moreover, the continuous shrinking of CMOS devices tends...
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