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White light interferometry (WLI) has been used in the semiconductor industry for the measurement of topography, step height, and via depth, utilizing its fundamentally short coherence length. This allows the tool to achieve nanometer level resolution, making this technique ideal for through silicon via (TSV) measurements for high aspect ratio vias. In this paper, we will discuss one of the important...
High aspect ratio through silicon vias (TSV) present a challenge for measurement of bottom critical dimension (BCD) and depth. TSVs smaller than 5 micron diameter with greater than 12∶1 depth to BCD aspect ratio have particularly poor signal to noise ratio in the measured signal. This paper proposes a method for improving the interferometric measurement of these very small and high-aspect ratio TSVs...
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