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Robust excitation of an exciton state via adiabatic rapid passage is demonstrated in a single InGaAs quantum dot using subpicosecond optical pulses. A chirp sign dependence of the transfer efficiency indicates dephasing tied to phonons.
Data are presented showing high external differential quantum efficiency (DQE) and record-high output power in vertical-cavity surface-emitting lasers (VCSELs) with diameters below 3 μm. Good uniformity and reproducibility are achieved in devices with very small sizes. Over 75% DQEs are measured with maximum output powers of 5, 7.3, 8, 8.7 and 11.6 mW for 1, 1.5, 2, 2.5 and 3 μm diameter VCSELs, respectively.
Simultaneous control of exciton qubits in two distinguishable InAs semiconductor quantum dots with emission wavelengths near 1.3 microns is demonstrated through the development and application of general femtosecond pulse shaping protocols.
All-epitaxial oxide-free vertical-cavity surface-emitting lasers (VCSELs) are demonstrated. 4-µm-diameter VCSEL is shown with threshold current of 350 µA, slope efficiency of 0.77 W/A, wall-plug efficiency of 21% and output power of 6.3 mW.
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