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Transistor operation by common emitter (CE) current modulation is shown for the first time in III-N hot electron transistors (HETs). The emitter and collector barriers ($\phi _{\mathrm {\mathbf {BE}}}$ and $\phi _{\mathrm {\mathbf {BC}}}$ ) are implemented using Al0.45 Ga0.55N and In0.1Ga0.9N layers as polarization dipoles, respectively. CE modulation is achieved by increasing the E-B barrier height...
Common emitter (CE) transistor operation is demonstrated for the first time in III-N HETs using a polarization-dipole (PD) based emitter and collector barrier design, which simultaneously enables high-energy injection, low leakage currents and low base resistance.
An imaging technique is presented that enables monitoring of the wet thermal oxidation of a thin AlAs layer embedded between two distributed Bragg reflector mirrors in a micropillar. After oxidation we confirm by white light reflection spectroscopy that high quality optical modes confined to a small volume have been formed. The combination of these two optical techniques provides a reliable and efficient...
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