Low-temperature-grown GaAs (LT-GaAs)-based Fabry-Pérot cavity photoconductors, designed for RF and THz optoelectronics applications using1550 nm lasers, are studied. The sub-sampling of continuous waves at frequencies up to 300 GHz is presented. The duty-cycle-limited conversion losses measured up to 67 GHz show that this GaAs-based photoconductor behaves as a nearly perfect photoswitch controlled...
It is shown that a continuous wave output power reaching 1.8 mW at 252 GHz can be generated by photomixing in a low-temperature-grown GaAs photoconductor using a metallic mirror-based Fabry-Pérot cavity thanks to an impedance matching circuit.
It is shown that a continuous wave output power of 0.35 mW at 305 GHz can be generated by photomixing in a low temperature grown GaAs photoconductor using a metallic mirror Fabry-Pérot cavity. The output power is improved by a factor of about 100 as compared to the previous works on GaAs photomixers.
A transverse Electromagnetic Horn Antenna is monolithically integrated with a low-temperature-grown GaAs vertical photoconductor on a silicon substrate forming a vertically integrated photomixer. Continuous-wave terahertz radiation is generated at frequencies up to 3.5 THz with a power level reaching 20 nW around 3 THz.
We report our investigation on low-temperature-grown GaAs THz photomixers using two different kind of antennas: silicon lens coupled spiral antenna and transverse electromagnetic horn antenna. We demonstrate that the horn radiates more power than the spiral above 600 GHz and at 2 THz the improvement is about a decade.
We have developed an epitaxial layer transfer technique for THz devices. Here we report the fabrication and the characterization of a THz photomixer on a silicon substrate. The active part of the photomixer is a low-temperature-grown GaAs mesa which has been transferred and layer bonded onto a Si substrate. The preliminary measurement of the THz signal generated in a photomixing configuration at 0...
We report our investigation on realization of 1.55 mum wavelengths sensitive photomixer based on GaAsSb/InP uni-travelling-carrier photodiode. The epitaxial structure and technological steps are described.
The investigation of THz generation using low-temperature-grown GaAs (LTG-GaAs) photoconductors integrated with horn antennas is reported. Results obtained using a photomixing experiment are presented. A maximum generated power of 1 muW at 780 GHz was achieved for an optical power of 2times80 mW and a photocurrent of 1 mA.
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