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The high breakdown voltage AlGaN/GaN HEMTs with source-terminated field plate was firstly fabricated for high frequency and high power application, employing by CF4 plasma treatment for enhancement-mode (E-mode). The results showed that by adding the distance of gate to drain, LGD from 5 um to 15um, the breakdown voltage of the device was rapidly increased 350V, whose value is from 50V to 400V while...
The AlGaN/GaN HEMTs with source-terminated field plate was firstly fabricated, employing by CF4 plasma treatment for enhancement-mode (E-mode). The results showed that by adding LGD from 5 um to 15 um, the breakdown voltage of the device was rapidly increased 350 V, whose value is from 50 V to 400 V while the threshold voltage of the device, VTH stayed about 0.5 V by the technology of CF4 plasma modulating...
The lateral field effect rectifier (L-FER) on AlGaN/GaN heterostructure on silicon substrate compatible with the HEMT process has been characterized for high temperature operation (up to 250 degC). The proposed rectifier takes advantage of adjusting the forward-on voltage to a slightly positive value by fluorine plasma treatment. The temperature dependences of the forward-on voltage and the on-resistance...
In conclusion, an AlGaN/GaN HEMT-compatible lateral field-effect rectifier is demonstrated by utilizing the threshold-voltage controlling capability of the fluorine plasma treatment technique. The rectifier features low on-resistance, low turn-on voltage, high temperature operation and high reverse breakdown voltage. The rectifier is expected to exhibit fast reverse recovery time because of its unipolar...
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