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This paper presents a low noise amplifier with active balun by using SiGe0.35 technology process for WLAN, the simulation results show that input return loss, S11, is less than −19.1dB and output return loss, S22, is less than −11.7 dB, output return loss, S33, is less than −12.8 dB. The power gain, S21, is 14.7dB another power gain, S31, is 14.4 dB, and the noise figure is less than 3.7 dB for the...
An ultra wideband low-noise amplifier (LNA) with shunt resistive-feedback is proposed for wideband input matching, broadband power gain and flat noise figure (NF) response. The proposed wideband LNA is implemented in TSMC 0.18µm CMOS technology. Measured results show that power gain is greater than 6.8 dB and input return loss (S11) is below −7 dB from 3.1 to 10.6 GHz. The minimax input 3rd-order...
This paper presents a wideband low noise amplifier by using Taiwan Semiconductor Manufacturing Company (TSMC) 0.18 um CMOS process for K-Band application. We use active diode to improve linearity, and improve TSMC inductor module by advanced design system momentum. The measurement results show that the input return loss is less than −8 dB, output return loss is less than −13.4 dB, the gain is 4.8...
The Low Noise Amplifier is implemented in TSMC 0.18 um 1P6M CMOS process. Circuit architecture of the first-stage uses the cascade stage to suppress Miller effect, the second-stage at the gate control of a group received more power, and then use voltage to control gain to achieve the advantages of savings in power consumption, amplifier measurement results shows the status of low-frequency. The gain...
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