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A GNU Octave - based application for device-level compact model evaluation and parameter extraction has been developed. The applications main features are as follows: experimental I–V data importing, generating input data for different circuit simulation programs, running the simulation program to calculate I–V characteristics of the specified models, calculating model misfit and its sensitivity to...
The design of advanced integrated circuits (IC) in particular for low power analog and radio-frequency (RF) application becomes more complex as the device level modeling confronting challenges in micro- and nano-meter CMOS processes. As present CMOS technologies continue geometry scaling the designers can benefit using dedicated SPICE MOSFET models and apply specific analog design methodologies. The...
Introduction: The ultrafast (∼tens of ns switching time) metal-insulator transition (MIT) VO2 switches reported here show excellent RF performance in a very wide frequency range (DC-40 GHz), relatively low actuation voltage (∼12 V), higher yield and much simpler fabrication process compared to classic RF MEMS counterparts. For the first time, CMOS compatible VO2 microwave switches on high resistivity...
Aggressive scaling of the supply voltage reduces the energy needed for switching of standard CMOS devices. However, advanced CMOS technologies are facing two main problems that consequently lead to higher power consumption: the complexity of a further supply voltage reduction, and the rising leakage currents that directly affect the switching ratio between the ON and OFF states. At present, the available...
In this paper, we report for the first time, assessment on mobility extraction in equilateral triangular gate-all-around Si nanowire junctionless (JL) nMOSFETs with cross-section down to 5 nm. This analysis was performed in accumulation regime, as a first step, addressing bias-dependency of various key MOSFET parameters (e.g. series resistance, channel width and gate-channel capacitance), non-uniform...
In this work we report dense arrays of highly doped gate-all-around Si nanowire accumulation-mode nMOS-FETs with sub-5 nm cross-sections. The integration of local stressor technologies (both local oxidation and metal-gate strain) to achieve ≥ 2.5 GPa uniaxial tensile stress is reported for the first time. The deeply scaled Si nanowire shows low-field electron mobility of 332 cm2/V.s at room temperature,...
In this work we report an experimental study on accumulation-mode (AM) gate-all-around (GAA) nMOSFETs based on silicon nanowires with uniaxial tensile strain. Their electrical characteristics are studied from room temperature up to ∼400 K and carrier mobility, flat-band and threshold voltages are extracted and investigated.
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