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We investigated the comparative structural and optical properties of semipolar InGaN/GaN multiple quantum wells (MQWs) grown on the facet GaN/sapphire substrate by metal–organic chemical vapor deposition using lateral epitaxial overgrowth. The scanning electron microscopy (SEM), photoluminescence (PL), and temperature-varying time-resolved photoluminescence measurement were performed...
We reported the InGaN/GaN multiple quantum well (MQW) blue light-emitting diodes (LED) grown on patterned sapphire substrates (PSS). The surface morphologies for samples grown on the "dome" PSS in different growth stages were observed by scanning electron microscopy (SEM). The fully coalescence of the growth fronts was achieved for 30 minute growth sample with the "bumps" surface...
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