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The paper is concerned with the development of a micro testing machine for solder joint specimens. The micro tester has been developed for testing a new solder alloy, namely Innolot (Sn-Ag3.7Cu0.65Bi3.0Sb1.43Ni0.15), under various cross-beam speeds and temperatures. In addition, the procedure for fabricating lap-shear solder joints, which will be tested under monotonic and creep loadings, is given...
The impact of sputtering ambient on the properties of HfLaO film is studied by varying the ratio of Ar to O2. In order to optimize the electrical performances, the HfLaO film is then annealed in N2, NO or NH3 and evaluated based on Si MOS capacitors. As a result, appropriate ratio of Ar to O2 during sputtering can increase the permittivity of film while the NH3 annealing can improve its properties.
Pentacene OTFTs with HfLaO or HfO2 as gate dielectric were fabricated. The dielectrics were prepared by sputtering method and then annealed in NH3 at 400 oC. The k value for the HfLaO and HfO2 films amounted to 12.3 and 11.8 respectively. Both of the OTFTs could operate with a supply voltage of -5 V. The mobility of the OTFT with HfLaO gate dielectric was 0.688 cm2/Vs, which was much higher than that...
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