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We study the impact of hot-carrier degradation (HCD) on the performance of graphene field-effect transistors (GFETs) for different polarities of HC and bias stress. Our results show that the impact of HCD consists in a change of both charged defect density and carrier mobility. At the same time, the mobility degradation agrees with an attractive/repulsive scattering asymmetry and can be understood...
A detailed understanding of the physical mechanisms behind hole capture in pMOSFETs is essential for a number of reliability issues, including the negative bias temperature instability (NBTI), hot carrier degradation, random telegraph and l/f noise. In order to better understand the controversial frequency dependence of NBTI, we study the frequency dependence of hole capture on individual defects...
Within the theory of non-radiative multi phonon (NMP) transitions the reaction rate for an electronic transition is proportional to the product of the corresponding electronic matrix element and the line-shape function. The theory is discussed for the case of oxide traps in MOS structures. A simple method for the calculation of reaction rates for atomistic models is derived from approximations to...
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