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This paper describes the investigation of a Plasma-Induced Damage (PID) event in the metal stack of an 8-in 130-nm-high volume process line. The relevant PID stress and measurement sequence used during standard productive fast Wafer Level Reliability Monitoring, which had detected this event, is discussed, and it is shown to be very effective. Additionally, hot carrier stress was performed on MOS...
This paper describes the assessment of a plasma induced damage (PID) event in the metal stack of an 8 inch 130 nm process line. The relevant PID stress and measurement sequence used, during standard productive fast wafer level reliability (fWLR) monitoring, which had detected this event, is discussed, and it is shown to be very effective. Additionally, hot carrier stress was performed on MOS transistors...
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