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The current–voltage characteristics of p ++ -InGaAs/n-InP diodes grown by molecular beam epitaxy have been studied. When the substrates are directly radiatively heated during the growth (the so-called In-free mounting), a displacement of the electrical junction towards the n-type InP is observed for high doping ([Be]=9×1019cm-3). This effect comes from an increased Be diffusion, induced by...
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