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We have successfully fabricated polycrystalline diamond rectifying junction devices on n-type (100) silicon substrates by Hot Filament Chemical Vapor Deposition (HFCVD) using methane/hydrogen process gas and trimethyl borate and trimethyl phosphite dissolved in acetone as p- and n-type dopants, respectively. Impedance spectroscopy and current–voltage analysis indicates that the conduction is vertical...
60 GHz ultra wide-band (UWB) communication is an emerging technology for high speed short range communications. However, the requirement of high-speed sampling increases the cost of receiver circuitry such as analog-to-digital converter (ADC). In this paper, we propose to use a compressive sensing framework to achieve a significant reduction of sampling rate. The basic idea is based on the observation...
Here we demonstrate the growth of GaAs and InP nanowires on silicon (111) using gold as the metal seed particle. An ordered array of gold nano dots is integrated on the surface of a silicon substrate using self-assembled polystyrene nanospheres as the Au evaporation template. Growth of the wires is done by chemical beam epitaxy under a vapor phase environment using the Vapor Liquid Solid mechanism...
An optoelectronic front end for a high-speed solid-state based time-domain fluorescence measurement system is investigated. It consists of a source light emitting diode (LED) and photodetector (PD) pair connected to an original transimpedance amplifier. The amount of light reaching the detector from the fluorescence and the effect of different noise sources on the proposed system are evaluated. Our...
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