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Similar InAs/GaAs quantum-dot lasers emitting on either the ground or excited state are studied under optical feedback. The feedback-sensitivity and dynamics of the excited-state laser are investigated and compared to that of the ground-state laser.
Long wavelength (LW) vertical cavity surface emitting lasers (VCSELs) are important low cost and low power consumption sources for optical interconnects in data centers, sensing and spectroscopy [1,2]. We discuss here the recent progress in the design, fabrication and industrialization of such devices made by using wafer fusion, which allows integration of GaAs-based distributed Bragg reflectors (DBRs)...
Edge-emitting semiconductor lasers having a highly-asymmetric vertical waveguide are presented. Ridge-waveguide lasers provide record single-transverse mode power of 2.1 W with a maximum brightness of 50 MWcm−2 sr−1, operating current independent ultra-low astigmatism of only 2.5 μm and beam divergence angle of 9° × 10°.
The dynamics of C-band quantum-dot and quantum-dash lasers under small-signal modulation are compared. We show a strong influence of the density of states function on the cut-off frequency, being much higher for QDs at low currents, but reaching similar values for QDashes at higher currents.
25 Gb/s transmission over 10 km of standard single mode fiber is demonstrated for 1300 nm wafer fused InP/GaAs VCSELs with increased strain in quantum wells and higher output coupling from the cavity.
Error-free (bit-error ratio < 10−9) generation and amplification of phase-coded signals are presented with a symbol rate up to 40 GBd using quantum-dot (QD) based semiconductor optical amplifiers (SOA) emitting at a wavelength of 1.3 µm. Phase-coded signal generation is demonstrated via direct modulation of a QD SOA exhibiting a linear fiber-to-fiber gain of 8 dB. In comparison to gain modulation,...
InGaAs quantum dots (QD's) on GaAs substrate have been fabricated using metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) for the use in vertical cavity surface emitting laser diodes. Similar recombination spectra are obtained by employing the two different approaches of seeding and overgrowth with a quantum well. Despite the shift to larger wavelengths a large separation...
ZnCdSe quantum structures are investigasted for the effect of exciton localisation on the potential for opto-electronic applications. The investigation on ZnCdSe quantum dots as the active material in a laser diode and their temperature dependece show a transition from 0D-like to 2D-like characteristics limiting their capabiblity for devices. Furthermore, optimisation of electrical contacts due to...
Semiconductor diode lasers are presented whose active medium consists of quantum dots (QDs). Laser operation is based on zero-dimensionally localized carriers. High density arrays of uniform QDs are fabricated using epitaxy in the Stranski-Krastanow growth mode. The strong localization of carriers in the QDs leads to non-thermal population statistics directly impacting the gain and threshold. The...
Non-linear properties of quantum-dot and quantum-dash lasers under dual-mode optical injection are investigated experimentally, showing higher nonlinearity of quantum-dash lasers. Frequency response measurements show equal 3 dB modulation bandwidth of 8 GHz.
40 GHz quantum-dot mode-locked lasers providing low-jitter optical and electrical microwave signals are investigated. 160 Gb/s data transmission based on differential quadrature phase-shift keying and optical time-division multiplexing is demonstrated using a packaged module.
Highly efficient wavelength conversion is observed by non-degenerate four-wave mixing in an InAs/GaAs quantum dot Fabry-Perot laser. A maximum normalized conversion efficiency of −3 dB, along with a high 35 dB optical SNR are reported.
Temperature-stable oxide-confined 980 nm vertical-cavity surface-emitting lasers for optical interconnects are presented. For the first time 40 Gbit/s 4-PAM data transmission is experimentally demonstrated at temperatures of 100 and 120°C.
We report on jitter reduction and frequency tuning ability of 1.31 µm 40 GHz quantum-dot mode-locked lasers with the main focus on hybrid mode locking. The frequency of the external electrical source is usually chosen to be close to the passive frequency of the mode-locked laser, which is increasingly difficult for high frequencies far beyond 40 GHz. Sub-harmonic mode locking is demonstrated, showing...
By exploiting different discrete optical transitions in a QD SOA, we demonstrate theoretical and experimental distortion-free simultaneous amplification of two counter-propagating 40 Gbit/s OOK signals separated by 93 nm for a wide operating-parameter range.
The effect of the spectral detuning between the spectral gain maximum of an active region based on AlInGaAs nanoheterostructures and vertical microcavity resonance (gain-cavity detuning) on the steady-state- and dynamic characteristics of high-speed vertical-cavity surface-emitting lasers (VCSELs) for the 850-nm spectral range with two selectively oxidized current apertures is studied. For multimode...
Temperature-stable, energy-efficient, and error-free data transmission with oxide-confined 980 nm VCSELs is obtained for bit rates from 25 to over 40 Gb/s across the broad temperature range 25 to 85 °C. The VCSELs are well-suited for board-to-board, chip-to-chip, and on-chip optical interconnects for computer communications.
Picosecond optical pulse generation based on photonic band crystal lasers is a very promising application of this novel laser type. Mode-locking and direct modulation performance of lasers with different structure designs will be presented.
The static and dynamic properties of p-doped quantum-dot distributed-feedback lasers based on pure index-gratings are presented. Optical output power up to 34 mW, 58 dB SMSR, and 15 Gb/s error-free data rate are shown.
Error-free data transmission using oxide-confined 980 nm VCSELs is reported for 50 and 46 Gb/s at 25 and 85°C, respectively. These extremely temperature-stable lasers are particularly well-suited for ultra-short-reach and very-short-reach optical interconnects.
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