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The temperature dependences of contact resistivity are measured for Pd/Ti/Au ohmic contacts toward Indium Nitride (with different doping level 2.0 · 1018 and 8.3 · 1018 cm−3) over the wide temperature range (4.2–380 K). The growing curves are obtained in the entire investigated temperature range for both doping level. They are explained within the mechanism of thermionic current flow through metal...
The structural and optical properties of the Ge1−xSnx layers with Sn mole fraction x of about 0.04 and 0.07 grown by molecular beam epitaxy on strain relaxed (001) Ge buffer layers have been investigated. The formation of GeSn solid solutions is proved by the high-resolution X-ray diffraction and micro-Raman investigations. The Ge1−xSnx layers are found to be partially relaxed, the degree of strain...
X-ray diffraction curves and reciprocal space maps from self induced GaN nanowires on Si(111) substrates were examined theoretically and experimentally. Numerical simulation shows how distribution of such NWs parameters as diameter, length, strain and orientation influence broadening of X-ray diffraction peak profiles. Calculated shape of symmetric 0002 GaN reciprocal space map well correlates with...
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