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It is very important to increase light extraction efficiency in LED structure design. The antireflection film technology is a simple and cost-cutting method. In this paper, we proposed a SiON layer as an antireflection coating deposited on the surface of the conventional AlGaInP LED which can be used to improve the performance of the chip. In the conventional AlGaInP LED, ITO thin film was deposited...
A trichromatic phosphor-free white light-emitting diode (LED) has been implemented by using adhesive bonding scheme. The device has been operated as a three-terminal device with independent electrical control of an AlGaInP-based red LED chip and a GaN-based dual-wavelength (blue and green) LED chip. As 25mA and 60mA was injected into the red and blue-green LED chips at room temperature respectively,...
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