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In this study, epitaxial layers of GaAs-based solar cells were grown on Si substrates using a molecular beam epitaxial system. The pyramid-like via hole recessed electrode structure was fabricated on the back side of the Si substrate to improve the performance of the resulting solar cells. Since the current path was effectively reduced by the via hole recessed structure, the associated series resistance...
An inverted GaAs solar cell structure has been grown with the MBE method. Together with the substrate, the structure was glued to a polymer film of polyethylene terephthalate (PET film) by means of epoxy resin. After the removal of the substrate, the contact platforms were created and the light window was opened. Research of the solar cell photovoltaic properties was conducted at non-concentrated...
Unijunction GaAs solar cells structures were grown on buffer GaAs/GaP/Si layers. The buffer layers were different in their crystallographic orientation ((001 or 00-1)), presence or absence of dislocation filters, also number of thermocycling operations. Solar cells without a antireflection coating were fabricated, and their characteristics were measured. Some perspective directions for improving the...
Critical thicknesses of two-dimensional to three-dimensional growth in GexSi1−x layers were measured as a function of composition for different growth temperatures. In addition to the (2 × 1) superstructure for a Ge film grown on Si(100), the GexSi1−x layers are characterized by the formation of (2 × n) reconstruction. We measured n for all layers of Ge/GexSi1−x/Ge heterosystem using our...
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