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BaTiO3 with and without Hf incorporation was studied as charge-trapping layer (CTL) for flash memory applications. Comparing with the device with BaTiO3 CTL, the one with Hf-doped BaTiO3 shows better performance in terms of higher program speed and better data retention due to suppressed leakage by Hf incorporated in BaTiO3. Therefore, the Hf-doped BaTiO3 is a promising candidate as CTL for flash...
MIS capacitors with a high-κ HfLaON or HfLaO gate dielectric are fabricated by using a reactive sputtering method to investigate the applicability of the films as a novel charge-storage layer in a metal-oxide-nitride-oxide-silicon nonvolatile memory device. Experimental results indicate that the MIS capacitor with a HfLaON gate dielectric exhibits a large memory window, high program/erase speed, excellent...
Storage properties of high-κ HfLaON or HfON dielectric as charge-storage layer in MONOS non-volatile memory device are comparatively investigated by fabricating MIS capacitors using reactive sputtering method. Larger memory window, higher program/erase speed, and reasonable retention were observed for the HfLaON MIS capacitor than the HfON MIS capacitor. This is probably because La incorporation...
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