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For the first time, an asymmetric lightly doped Schottky barrier carbon nanotube field effect transistor (SB_CNTFETs) is proposed and simulated using quantum simulations. Comparisons are made among four SB_CNTFETs structures for electrical characteristics. One is the conventional SB_CNTFET with an intrinsic channel. The other proposed and studied designations are an asymmetrically doped SB_CNTFET...
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