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Ion implantation induced Quantum Well (QW) intermixing using high energies (2 to 8 MeV As + and P + ) has been shown to be an effective technique for achieving spatially selective tuning of QW laser structures (InGaAs/GaAs and InGaAs/InP). Work illustrating the effects of ion dose, energy, current density and implant temperature is presented for the InGaAs/GaAs QW laser structure,...