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Grown on a (111) high-resistivity silicon substrate, 0.1-mum gate AlInN/GaN high-electron mobility transistors (HEMTs) achieve a maximum current density of 1.3 A/mm, an extrinsic transconductance of 330 mS/mm, and a peak current gain cutoff frequency as high as fT = 102 GHz, which is the highest value reported so far for nitride-based devices on silicon substrates, as well as for any AlInN/GaN-based...
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