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In this paper, we present an innovative solution to successfully metallize Through Silicon Vias (TSV) with High Aspect Ratio (10:1). These structures represent a key element in the 3D mid-process integration approach. The metallization consists in depositing, respectively, a diffusion barrier and a seed layer, using two different conformal deposition techniques. The technique used for the barrier...
An innovative approach to heat energy harvesting (HEATec) is proposed in this paper. It consists of a two-step conversion of heat into electricity. The first step is a thermo-mechanical conversion by a bimetal and the second is an electromechanical conversion by a piezoelectric. The first developed prototypes show natural thermal resistance matching between their body and the interface with ambient...
Thermal g radients, c ommonly p resent i n o ur e nvironment (fluid lines, warm fronts, electronics) are sources of energy rarely used today. This paper aims to present innovative approaches of thin and/or flexible thermal energy harvesters for smart and autonomous sensor network applications. The harvester system will be based on the collaborative work of interrelated energy nodes/units, which will...
An innovation approach to thermal energy harvesting is presented. It consists of a two step conversion of heat into electricity. The new technique can be used for powering ultra-low power electronics and autonomous systems. One of the keys to improve the generated power density is downscaling of individual devices. Laws modeling downscaling have been established in this paper and show that the miniaturization...
A disruptive approach to thermal energy harvesting is presented. The new technique can be used for powering ultra-low power electronics and autonomous systems. We propose a two step conversion of heat into electricity: thermal to mechanical and mechanical to electrical. Devices can work in a wide range of temperatures: from −40°C to 300°C, and the available mechanical power density is in the order...
Air gaps were successfully integrated in a multi level metallization interconnect stack using 65 nm design rules on 300 mm wafers. The proposed approach allows a low cost integration of localized air cavities using a sacrificial material to solve via misalignment issues. Air gap integration is shown to be mechanically robust and presents excellent electrical results with high gains on RC delays. In...
The introduction of air gaps in multi-level Cu interconnect stacks will be mandatory to achieve high performance signal propagation characteristics for advanced technology node. In this paper, air cavities were successfully introduced in a two-metal level interconnect stack using respectively a polymer and a sacrificial SiO2 at via and metal levels. Combined with a diluted HF chemistry and specific...
The spectral photoresponse of advanced interconnects is potentially interesting for the precise characterization of advanced interconnects, using standard comb test structures under illumination. This electro-optical method provides detailed information of the chemical composition of each layer of the dielectric stack via their bandgap. In addition, this non-destructive characterization is sensitive...
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