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An inverse approach is developed and implemented to quantify the resistance of the die-attach thermal interface (DTI) in high power light emitting diodes (LEDs). The transient time domain dominated by the resistance of the DTI is selected first using a hybrid analytical/numerical solution. Then, the resistance of the DTI is determined inversely from the experimental data over the predetermined transient...
An advanced inverse approach, based on the transient junction temperature behavior, is proposed and implemented to quantify the resistance of the die-attach thermal interface (DTI) in high-power light-emitting diodes (LEDs). After describing the unique transient behavior of high-power LEDs associated with the forward voltage method, a hybrid analytical/numerical model is used to determine an approximate...
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