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Organic ferroelectric random access memory (FeRAM) shows the advantages of durable data storage and nondestructive readout as nonvolatile memory in flexible electronics. In article number 1701907, Lang Jiang, Wenping Hu, and co‐workers present a novel FeRAM cell with one selection transistor and one ferroelectric memory transistor (1T1T) sharing a common dielectric, making multiple dielectric handling...
Organic electronics based on poly(vinylidenefluoride/trifluoroethylene) (P(VDF‐TrFE)) dielectric is facing great challenges in flexible circuits. As one indispensable part of integrated circuits, there is an urgent demand for low‐cost and easy‐fabrication nonvolatile memory devices. A breakthrough is made on a novel ferroelectric random access memory cell (1T1T FeRAM cell) consisting of one selection...
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