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This work reports on metal assisted chemical etching (MACE) for high aspect silicon structures. Ultra-high aspect trenches and pillars of 400 and 80, respectively, have been achieved by MACE. Additionally, a cantilever fabrication based on above pillars is demonstrated by using assembly technology. The pillars are assembled onto glass substrate and fixed by conductive glue. The fabricated cantilever...
Microelectromechanical system (MEMS) technologies have produced various high-value-added products and devices on the basis of heteroginous integration technology including LSI integration. On the other hand, recent LSI has been miniaturized according to scaling law. LSI has been fabricated by standardized process, and its production requires huge facilities. On the other hand, the principle, structure...
This paper reports the fabrication technique of electron micro-optics using silicon deep reactive ion etching. Stacked 120-mum-thick three silicon wafers stacked with cavities using patterned glass substrates are etched by ldquoa direct cavity through etching techniquerdquo. An array of the electron micro-optics consisted of three electrodes can be fabricated by one-mask process without alignment...
This paper present the fabrication and integration processes employed in order to realize the Si-PZT hybrid XY-microstage. A silicon XY-microstage with dimensions of 20 times 20 times 0.4 mm containing Moonie amplification mechanisms is fabricated and evaluated. The experimental results show that this microstage containing a commercial PZT actuator and Moonie angle of 2 degrees produced a displacement...
The design, fabrication and characterization of an integrated Schottky emitter array are presented and demonstrated. The integrated emitter array consists of boron-doped diamond heaters with a diamond tip, Si micro gate array and Si focusing lens array. The diamond film is selectively deposited using electrophoresis of diamond seed particles and a hot filament chemical vapor deposition (HF-CVD) technique...
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