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The electric properties of Pt Schottky contacts on semipolar r-plane and polar c-plane of GaN micro truncated-pyramid are compared. The Schottky diodes of the inclined r-plane sample illustrate a relatively inferior rectified performance than that of the top c-plane GaN in term of the lower Schottky barrier heights, larger ideality factor and reverse leakage current. By depositing Pt metal on the...