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The present work highlights the improved Schottky behavior of Ag/ZnO nanojunctions which make use of unirradiated and 80-MeV oxygen ion (O6+) irradiated randomly oriented ZnO nanorods. While leakage current is apparently low, the rectifying nature of the nanojunctions was clearly evident from room-temperature current–voltage (I–V) measurements. In case of use of irradiated nanorods, the Schottky barrier...
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